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Semi-Power Products
SiC / GaN SBD Schottky Barrier Diode and MOSFET Products
SBD Schottky Barrier Diode
| Symbol | VRRM | IF | IFSM | RthJ-C | PD | TJ,max | Technology | Package | |
|---|---|---|---|---|---|---|---|---|---|
| Partnumber | Reverse Voltage | Forward Current | Non-repetitive peak forward current |
Thermal Resistance | Power Dissipation | Si / SiC / Gan |  |
||
| EL-SS00865JA | 650V | 8A | 74A | 1.51°C/W | 93W | 175°C | SiC | TO-252-3L | details |
| EL-SF01065JA | 650V | 10A | 90A | 1.30°C/W | 78W | 175°C | SiC | TO-220-2L | details |
| EL-SB050120JA | 1200V | 50A | 300A | 0.20°C/W | 500W | 175°C | SiC | TO-247-2L | details |
MOSFET
| Symbol | Channel Type | RDSon | VDSmin | VGS | ID | TJmax | RthJ-C | PD | Technology | Package | |
| Partnumber | N/P Channel | Drain-Source Resistance |
Drain-Source | Gate-Source Voltage |
Continuous Drain-Current |
Junction Temperature |
Thermal Resistance | Power- Dissipation |
Si / SiC / Gan | |
|
| EL-PSR4810AP | P | 480mOhm | -100V | +/- 25V | -5A | 150°C | 4.5°C/W | 27W | Si | TO-252-3L | details |
| EL-MNR04120PA | N | 40mOhm | 1200V | - 4 ~ 18V | 55A | 175°C | 0.40°C/W | 288W | SiC | TO-247-3L | details |
| EL-MKR02120XA | N | 20mOhm | 1200V | - 4 ~ 18V | 100A | 175°C | 0.20°C/W | 465W | SiC | TO-247-4L | details |
| EL-MKR04120XA | N | 40mOhm | 1200V | - 4 ~ 20V | 55A | 175°C | 0.40°C/W | 223W | SiC | TO-252-3L | details |
Everlight Offer for SiC/GaN SBD and MOSFET
-Taiwan Fabless Chip Design Partner
-Taiwan SiC / GaN Waferfab Partner
-Packaging Backend at EVERLIGHT Tong-Luo Factory ( Taiwan )
-Production capacity reservation
-Die safety stock
-Customization welcome
