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Semi-Power Products
SiC / GaN SBD Schottky Barrier Diode and MOSFET Products
SBD Schottky Barrier Diode
| Symbol | VRRM | IF | IFSM | RthJ-C | PD | TJ,max | Technology | Package | |
|---|---|---|---|---|---|---|---|---|---|
| Partnumber | Reverse Voltage | Forward Current | Non-repetitive peak forward current |
Thermal Resistance | Power Dissipation | Si / SiC / Gan |  |
||
| EL-SAS00865JA | 650V | 8A | 74A | 1.51°C/W | 93W | 175°C | SiC | TO-252-3L | details |
| EL-SAF01065JA | 650V | 10A | 90A | 1.30°C/W | 78W | 175°C | SiC | TO-220-2L | details |
| EL-SAB050120JA | 1200V | 50A | 300A | 0.20°C/W | 500W | 175°C | SiC | TO-247-2L | details |
MOSFET
| Symbol | Channel Type | RDSon | VDSmin | VGS | ID | TJmax | RthJ-C | PD | Technology | Package | |
| Partnumber | N/P Channel | Drain-Source Resistance |
Drain-Source | Gate-Source Voltage |
Continuous Drain-Current |
Junction Temperature |
Thermal Resistance | Power- Dissipation |
Si / SiC / Gan | |
|
|
EL-MANR04120PA |
N | 40mΩ | 1200V | - 4 ~ 18V | 55A | 175°C | 0.40°C/W | 288W | SiC | TO-247-3L | details |
| EL-MAKR02120PA | N | 20mΩ | 1200V | - 4 ~ 18V | 100A | 175°C | 0.20°C/W | 465W | SiC | TO-247-4L | details |
| EL-MAKR04120PA | N | 40mΩ | 1200V | - 4 ~ 20V | 55A | 175°C | 0.40°C/W | 223W | SiC | TO-247-4L | details |
| EL-MAH01170XA | N | 1000mΩ | 1700V | - 4 ~ 20V | 5.2A | 175°C | tbd | tbd | SiC | TO-252-3L | details |
| EL MAKR0365XA TC | N | 30mΩ | 650V | - 10 ~ 23V | 110A | 175°C | 0.30°C/W | 490W | SiC | TO-247-TSC | details |
| EL MAKR04120PA TC | N | 40mΩ | 1200V | - 4 ~ 18V | 55A | 175°C | 0.33°C/W | 454W | SiC | TO-247-TSC | details |
Everlight Offer for SiC/GaN SBD and MOSFET
-Taiwan Fabless Chip Design Partner
-Taiwan SiC / GaN Waferfab Partner
-Packaging Backend at EVERLIGHT Tong-Luo Factory ( Taiwan )
-Production capacity reservation
-Die safety stock
-Customization welcome
